Topographic analysis of the surface of the GaSb〈Mn〉 magnetic semiconductor

Abstract

We have studied the formation of magnetic properties on the impurity–dislocation magnetism principle in a sample of a manganese-doped gallium antimonide compound semiconductor prepared by melt quenching. It has been shown using X-ray diffraction, optical microscopy, and scanning electron microscopy that the generation of dislocations and their motion during quenching play a key role in determining the microstructure of the GaSb〈Mn〉 magnetic semiconductor.