Effect of Ga and in doping on acid centers and oxygen chemisorption on the surface of nanocrystalline ZnO


Дәйексөз келтіру

Толық мәтін

Ашық рұқсат Ашық рұқсат
Рұқсат жабық Рұқсат берілді
Рұқсат жабық Тек жазылушылар үшін

Аннотация

Nanocrystalline gallium- and indium-doped zinc oxide samples have been prepared through coprecipitation from aqueous solutions. Acid centers on the surface of the materials have been investigated using temperature-programmed desorption and IR spectroscopy. The results demonstrate that, with increasing dopant concentration, the density of OH groups on the surface of ZnO〈Ga〉 and ZnO〈In〉 increases and the contribution of cation centers to surface acidity decreases. The interaction of the material with oxygen has been studied using in situ electrical conductivity measurements. Doping of zinc oxide with gallium or indium has been shown to increase the percentage of molecular chemisorbed oxygen species on the surface of the material.

Авторлар туралы

N. Vorob’eva

Faculty of Chemistry

Email: artem.marikutsa@gmail.com
Ресей, Moscow, 119991

A. Marikutsa

Faculty of Chemistry

Хат алмасуға жауапты Автор.
Email: artem.marikutsa@gmail.com
Ресей, Moscow, 119991

M. Rumyantseva

Faculty of Chemistry

Email: artem.marikutsa@gmail.com
Ресей, Moscow, 119991

V. Kozlovskii

Faculty of Chemistry

Email: artem.marikutsa@gmail.com
Ресей, Moscow, 119991

D. Filatova

Faculty of Chemistry

Email: artem.marikutsa@gmail.com
Ресей, Moscow, 119991

A. Gaskov

Faculty of Chemistry

Email: artem.marikutsa@gmail.com
Ресей, Moscow, 119991

Қосымша файлдар

Қосымша файлдар
Әрекет
1. JATS XML

© Pleiades Publishing, Ltd., 2016