Effect of Ga and in doping on acid centers and oxygen chemisorption on the surface of nanocrystalline ZnO
- Авторлар: Vorob’eva N.A.1, Marikutsa A.V.1, Rumyantseva M.N.1, Kozlovskii V.F.1, Filatova D.G.1, Gaskov A.M.1
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Мекемелер:
- Faculty of Chemistry
- Шығарылым: Том 52, № 6 (2016)
- Беттер: 578-583
- Бөлім: Article
- URL: https://journals.rcsi.science/0020-1685/article/view/157659
- DOI: https://doi.org/10.1134/S0020168516060182
- ID: 157659
Дәйексөз келтіру
Аннотация
Nanocrystalline gallium- and indium-doped zinc oxide samples have been prepared through coprecipitation from aqueous solutions. Acid centers on the surface of the materials have been investigated using temperature-programmed desorption and IR spectroscopy. The results demonstrate that, with increasing dopant concentration, the density of OH groups on the surface of ZnO〈Ga〉 and ZnO〈In〉 increases and the contribution of cation centers to surface acidity decreases. The interaction of the material with oxygen has been studied using in situ electrical conductivity measurements. Doping of zinc oxide with gallium or indium has been shown to increase the percentage of molecular chemisorbed oxygen species on the surface of the material.
Негізгі сөздер
Авторлар туралы
N. Vorob’eva
Faculty of Chemistry
Email: artem.marikutsa@gmail.com
Ресей, Moscow, 119991
A. Marikutsa
Faculty of Chemistry
Хат алмасуға жауапты Автор.
Email: artem.marikutsa@gmail.com
Ресей, Moscow, 119991
M. Rumyantseva
Faculty of Chemistry
Email: artem.marikutsa@gmail.com
Ресей, Moscow, 119991
V. Kozlovskii
Faculty of Chemistry
Email: artem.marikutsa@gmail.com
Ресей, Moscow, 119991
D. Filatova
Faculty of Chemistry
Email: artem.marikutsa@gmail.com
Ресей, Moscow, 119991
A. Gaskov
Faculty of Chemistry
Email: artem.marikutsa@gmail.com
Ресей, Moscow, 119991
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