Magnetoelectric Effect in Co/PbZr 0.45 Ti 0.55 O 3  Heterostructures with a Shaped Interface

A. I. Stognij; N. N. Novitskii; S. A. Sharko; A. I. Serokurova; N. N. Poddubnaya; A. V. Bespalov; O. L. Golikova; M. N. Smirnova; V. A. Ketsko

doi:10.1134/S0020168519090176

Magnetoelectric Effect in Co/PbZr_0.45Ti_0.55O₃ Heterostructures with a Shaped Interface

Авторлар: Stognij A.I.¹, Novitskii N.N.¹, Sharko S.A.¹, Serokurova A.I.¹, Poddubnaya N.N.¹, Bespalov A.V.², Golikova O.L.², Smirnova M.N.³, Ketsko V.A.³
Мекемелер:
1. Scientific–Practical Materials Research Centre, Belarussian Academy of Sciences
2. Moscow State Institute of Radio Engineering, Electronics, and Automation, Moscow Technological University
3. Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences
Шығарылым: Том 55, № 9 (2019)
Беттер: 968-973
Бөлім: Article
URL: https://journals.rcsi.science/0020-1685/article/view/158770
DOI: https://doi.org/10.1134/S0020168519090176
ID: 158770

Дәйексөз келтіру

Толық мәтін

Ашық рұқсат
Рұқсат жабық

Рұқсат берілді
Рұқсат жабық

Тек жазылушылар үшін

Аннотация
Авторлар туралы
Әдебиет тізімі
Қосымша файлдар
Статистика

Аннотация

We have studied heterostructures in the form of a thin layer of a ferromagnetic metal on ferroelectric PbZr_0.45Ti_0.55O₃ (lead zirconate titanate) substrates with a shaped interface. The structures offer an increased low-frequency magnetoelectric effect, reaching 10 mV/(cm Oe) in an ac magnetic field at a frequency of 1000 Hz. The structures demonstrated in this study are potentially attractive for designing and fabricating nonvolatile magnetic field sensors and magnetic memory elements.