Microstructure and Electrical Transport Properties of Bi3TiNbO9 High-Temperature Piezoceramics
- Authors: Spitsin A.I.1,2, Bush A.A.2, Kamentsev K.E.2, Segalla A.G.1, Khramtsov A.M.1, Chistyakova N.A.1
-
Affiliations:
- Elpa Research Institute
- Moscow Technological University (Moscow Institute of Radio Engineering, Electronics, and Automation)
- Issue: Vol 54, No 7 (2018)
- Pages: 736-743
- Section: Article
- URL: https://journals.rcsi.science/0020-1685/article/view/158494
- DOI: https://doi.org/10.1134/S0020168518070191
- ID: 158494
Cite item
Abstract
High-density ceramic samples of the Bi3TiNbO9 ferroelectric phase with a layered perovskite-like structure have been produced by tape casting slurry technology and hot pressing processes. The samples have been characterized by X-ray diffraction and dielectric, piezoelectric, and pyroelectric measurements. The results demonstrate that the samples have a well-defined texture due to the preferential orientation of the basal planes of their platelike grains across the pressing axis or along the film casting direction. The Curie temperature of the samples has been determined to be TC = 1180 K. The samples have anisotropic electrical transport characteristics. Their piezoelectric constants d33 in directions perpendicular and parallel to the texture plane is 22 and 5 pC/N, respectively. The conclusion has been drawn that the synthesized materials are potentially attractive for producing high-temperature piezoelectric elements.
About the authors
A. I. Spitsin
Elpa Research Institute; Moscow Technological University (Moscow Institute of Radio Engineering, Electronics, and Automation)
Author for correspondence.
Email: opt@elpapiezo.ru
Russian Federation, Panfilovskii pr. 10, Zelenograd, Moscow, 124460; pr. Vernadskogo 78, Moscow, 119454
A. A. Bush
Moscow Technological University (Moscow Institute of Radio Engineering, Electronics, and Automation)
Email: opt@elpapiezo.ru
Russian Federation, pr. Vernadskogo 78, Moscow, 119454
K. E. Kamentsev
Moscow Technological University (Moscow Institute of Radio Engineering, Electronics, and Automation)
Email: opt@elpapiezo.ru
Russian Federation, pr. Vernadskogo 78, Moscow, 119454
A. G. Segalla
Elpa Research Institute
Email: opt@elpapiezo.ru
Russian Federation, Panfilovskii pr. 10, Zelenograd, Moscow, 124460
A. M. Khramtsov
Elpa Research Institute
Email: opt@elpapiezo.ru
Russian Federation, Panfilovskii pr. 10, Zelenograd, Moscow, 124460
N. A. Chistyakova
Elpa Research Institute
Email: opt@elpapiezo.ru
Russian Federation, Panfilovskii pr. 10, Zelenograd, Moscow, 124460
Supplementary files
