Chemical interaction of InAs, InSb, GaAs, and GaSb crystals with aqueous (NH4)2Cr2O7–HBr solutions
- Авторы: Levchenko I.V.1, Stratiychuk I.B.1, Tomashyk V.N.1, Malanych G.P.1, Stanetskaya A.S.1
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Учреждения:
- Lashkaryov Institute of Semiconductor Physics
- Выпуск: Том 53, № 8 (2017)
- Страницы: 781-785
- Раздел: Article
- URL: https://journals.rcsi.science/0020-1685/article/view/158265
- DOI: https://doi.org/10.1134/S0020168517080106
- ID: 158265
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Аннотация
We have studied the nature and kinetics of the chemical interaction of InAs, InSb, GaAs, and GaSb crystals with aqueous (NH4)2Cr2O7–HBr solutions. The dissolution rate of the crystals has been measured as a function of etchant composition, solution stirring rate, and temperature. The results demonstrate that the dissolution rate of the semiconductors is diffusion-limited. We have determined the composition ranges of polishing solutions, optimized their compositions, and found conditions for the dynamic chemical polishing of the semiconductors. Ultrasmooth polished semiconductor surfaces have been obtained, with Ra ≈ 1 nm.
Об авторах
I. Levchenko
Lashkaryov Institute of Semiconductor Physics
Email: tomashyk@isp.kiev.ua
Украина, pr. Nauki 41, Kyiv, 03028
I. Stratiychuk
Lashkaryov Institute of Semiconductor Physics
Email: tomashyk@isp.kiev.ua
Украина, pr. Nauki 41, Kyiv, 03028
V. Tomashyk
Lashkaryov Institute of Semiconductor Physics
Автор, ответственный за переписку.
Email: tomashyk@isp.kiev.ua
Украина, pr. Nauki 41, Kyiv, 03028
G. Malanych
Lashkaryov Institute of Semiconductor Physics
Email: tomashyk@isp.kiev.ua
Украина, pr. Nauki 41, Kyiv, 03028
A. Stanetskaya
Lashkaryov Institute of Semiconductor Physics
Email: tomashyk@isp.kiev.ua
Украина, pr. Nauki 41, Kyiv, 03028
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