Initial stages of gallium arsenide metalorganic vapor phase epitaxy

Abstract

The initial stages of the growth of GaAs epitaxial layers by metalorganic vapor phase epitaxy have been studied by atomic force microscopy. The results demonstrate that the growth mechanism depends on the pressure in the deposition chamber (atmospheric or reduced to 10⁴ Pa), which can be understood in terms of changes in the adsorption–desorption processes on the growth surface with the participation of hydrogen.