Email this article Thermal Annealing As a Means of Controlling the Properties of the Magnetic Semiconductor CdCr2Se4
- Authors: Vinogradova G.I.1, Anzina L.V.1, Menshchikova T.K.2, Fedorov V.A.2
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Affiliations:
- Prokhorov General Physics Institute, Russian Academy of Sciences
- Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences
- Issue: Vol 55, No 11 (2019)
- Pages: 1092-1096
- Section: Article
- URL: https://journals.rcsi.science/0020-1685/article/view/158789
- DOI: https://doi.org/10.1134/S0020168519110153
- ID: 158789
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Abstract
We have demonstrated the feasibility of doping CdCr2Se4 single crystals with Group III elements (Ga, In, and Al) during annealing and identified relationships between annealing conditions, the composition of annealing mixtures, and properties of the crystals. Annealing mixture compositions have been found that ensure the possibility of preparing CdCr2Se4 single crystals with a considerably increased Curie temperature. We have performed multistep annealing of particular samples, which has made it possible to understand the role of each mixture component.
About the authors
G. I. Vinogradova
Prokhorov General Physics Institute, Russian Academy of Sciences
Author for correspondence.
Email: givin39@mail.ru
Russian Federation, ul. Vavilova 38, Moscow, 119991
L. V. Anzina
Prokhorov General Physics Institute, Russian Academy of Sciences
Email: fedorov@igic.ras.ru
Russian Federation, ul. Vavilova 38, Moscow, 119991
T. K. Menshchikova
Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences
Email: fedorov@igic.ras.ru
Russian Federation, Leninskii pr. 31, Moscow, 119991
V. A. Fedorov
Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences
Author for correspondence.
Email: fedorov@igic.ras.ru
Russian Federation, Leninskii pr. 31, Moscow, 119991
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