Growth and Properties of Nanofilms Produced by the Thermal Oxidation of MnO2/InP under the Effect of Mn3(PO4)2

Abstract

MnO₂ surface layers and the addition of Mn₃(PO₄)₂ through the gas phase have an advantageous combined effect on the thermal oxidation of InP, increasing the growth rate of the oxide film, ensuring rapid chemical binding of the indium, blocking its diffusion into the film, and activating phosphate formation processes, which leads to the formation of dielectric nanofilms with resistivity as high as 10¹⁰ Ω cm.