Electroluminescence of p-GaSe〈REE〉 Single Crystals

Abstract

We have studied the electroluminescence (EL) properties of p-GaSe〈REE〉 single crystals doped with N ≤ 0.1 at % gadolinium or dysprosium and exhibiting a switching effect (SE). The results demonstrate that, at such values of N, EL and SE parameters and characteristics are independent of the chemical nature of the rare-earth dopant (gadolinium or dysprosium). Rare-earth doping levels in the range N ≈ 10^–2 to 10^–1 at % ensure high stability and reproducibility of the EL and SE parameters. We have examined the feasibility of using p‑GaSe〈REE〉 single crystals for the fabrication of high-performance light switches and sources with S‑shaped current–voltage characteristics.