Preparation of Graphene on Copper Substrates of Various Geometries by Chemical Vapor Deposition

E. V. Zaitsev; G. S. Bocharov; P. N. Chuprov; S. V. Tkachev; D. Yu. Kornilov; S. P. Gubin; A. V. Eletskii; E. S. Kurkina

doi:10.1134/S002016851812018X

Preparation of Graphene on Copper Substrates of Various Geometries by Chemical Vapor Deposition

作者: Zaitsev E.V.¹^,2, Bocharov G.S.³, Chuprov P.N.¹, Tkachev S.V.¹, Kornilov D.Y.¹, Gubin S.P.¹^,4, Eletskii A.V.³, Kurkina E.S.²
隶属关系:
1. OOO AkKoLab
2. Mendeleev University of Chemical Technology
3. Moscow Power Engineering Institute (National Research University)
4. Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences
期: 卷 54, 编号 12 (2018)
页面: 1205-1215
栏目: Article
URL: https://journals.rcsi.science/0020-1685/article/view/158569
DOI: https://doi.org/10.1134/S002016851812018X
ID: 158569

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详细

In this paper, we examine the key features of the preparation of graphene by chemical vapor deposition on copper substrates differing in geometry (foil and wire). Along with graphene, we analyze impurity structures forming on the surface of copper substrates as a result of graphene synthesis and discuss their origin and possible ways of eliminating them.