Formation of Cobalt Impurity Microinclusions in Silicon Single Crystals

Abstract

The structure and chemical composition of cobalt impurity microinclusions in silicon have been studied by electron probe microanalysis using n- and p-type Si〈Co〉 samples prepared by diffusion doping and cooled at different rates after diffusion annealing. The cooling rate after diffusion annealing has been shown to have a significant effect on the structural parameters of the samples and the size of the forming impurity microinclusions. The size and shape of the impurity microinclusions determine their distribution over the bulk of the samples.