Thermodynamic Analysis of the Growth of Silicon Carbide Ingots in a Reducing Atmosphere

Abstract

We have analyzed phase equilibria in the Si–C–H–Ar system during silicon carbide ingot growth by the modified Lely method. The results indicate that the addition of even small amounts of hydrogen to an inert carrier gas leads to a sharp increase in the rate of carbon transport through the gas phase, mediated by volatile hydrocarbons, primarily acetylene, and prevents carbon enrichment in the solid source and corrosion of the graphite equipment in the single-crystal seed region.