Sources of Carbon Impurities in the Preparation of High-Purity Monoisotopic  28 Si by a Hydride Method

A. D. Bulanov; V. A. Gavva; A. Yu. Sozin; M. F. Churbanov; T. V. Kotereva; Yu. P. Kirillov; A. Yu. Lashkov; O. Yu. Troshin; T. G. Sorochkina; O. Yu. Chernova; N. V. Abrosimov; L. V. Shabarova

doi:10.1134/S0020168518100047

Sources of Carbon Impurities in the Preparation of High-Purity Monoisotopic ²⁸Si by a Hydride Method

Authors: Bulanov A.D.¹^,2, Gavva V.A.¹, Sozin A.Y.¹, Churbanov M.F.¹^,2, Kotereva T.V.¹, Kirillov Y.P.¹, Lashkov A.Y.¹, Troshin O.Y.¹^,2, Sorochkina T.G.¹, Chernova O.Y.¹, Abrosimov N.V.³, Shabarova L.V.¹
Affiliations:
1. Devyatykh Institute of Chemistry of High-Purity Substances
2. Lobachevsky State University
3. Leibniz-Institut für Kristallzüchtung
Issue: Vol 54, No 10 (2018)
Pages: 977-983
Section: Article
URL: https://journals.rcsi.science/0020-1685/article/view/158533
DOI: https://doi.org/10.1134/S0020168518100047
ID: 158533

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Abstract

This paper examines sources of carbon impurities in polycrystalline monoisotopic ²⁸Si prepared by a hydride method. Analytical data on the concentrations of carbon-containing impurities in volatile silicon compounds (²⁸SiH₄ and ²⁸SiH₄), process gases (Ar and H₂), and polycrystalline ²⁸Si are used to identify the major sources of carbon in the polycrystalline ²⁸Si prepared by the hydride method. These are the starting ²⁸SiH₄ and calcium hydride used in ²⁸SiH₄ conversion into ²⁸SiH₄. The rate of carbon intake into polycrystalline silicon from the apparatus material during the monosilane pyrolysis process does not exceed 9 × 10¹¹ cm^–2 h^–1. Polycrystalline silicon has been precipitated from monosilane with different concentrations of hydrocarbon impurities. At hydrocarbon concentrations in the range 10^–4 to 10^–3 mol %, the carbon concentration in the monosilane correlates with that in the silicon obtained from it. High-purity monosilane has been used to prepare polycrystalline ²⁸Si samples with concentrations of carbon impurities in the range (0.8–2.3) × 10¹⁵ cm^–3. Based on calculations of the carbon impurity distribution along the length of a zone-refined ingot, we examine the effect of the initial carbon concentration in the starting polycrystal on the yield of single-crystal monoisotopic ²⁸Si. Requirements are formulated for the carbon concentration in polycrystalline ²⁸Si which ensure a high yield of single crystals with parameters suitable for metrological applications.

Keywords

volatile silicon compounds, carbon-containing impurities, polycrystalline silicon, monosilane

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Sources of Carbon Impurities in the Preparation of High-Purity Monoisotopic 28Si by a Hydride Method

Full Text

Abstract

Keywords

About the authors

Supplementary files

Sources of Carbon Impurities in the Preparation of High-Purity Monoisotopic ²⁸Si by a Hydride Method