Effect of annealing on the electrical properties of SnTe crystals
- Authors: Bagieva G.Z.1, Abdinova G.D.1, Mustafaev N.B.1, Abdinov D.S.1
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Affiliations:
- Abdullaev Institute of Physics
- Issue: Vol 53, No 4 (2017)
- Pages: 358-360
- Section: Article
- URL: https://journals.rcsi.science/0020-1685/article/view/158196
- DOI: https://doi.org/10.1134/S002016851704001X
- ID: 158196
Cite item
Abstract
We have studied the effect of annealing on the electrical conductivity σ and thermoelectric power α of SnTe crystals. The results indicate that the temperature dependences of σ and α for both the unannealed and annealed SnTe crystals, as well as the effect of annealing on these parameters, are adequately accounted for in terms of a model that considers two valence bands separated by an energy gap.
Keywords
About the authors
G. Z. Bagieva
Abdullaev Institute of Physics
Author for correspondence.
Email: bagieva-gjulandam@rambler.ru
Azerbaijan, pr. Javida 131, Baku, AZ-1143
G. D. Abdinova
Abdullaev Institute of Physics
Email: bagieva-gjulandam@rambler.ru
Azerbaijan, pr. Javida 131, Baku, AZ-1143
N. B. Mustafaev
Abdullaev Institute of Physics
Email: bagieva-gjulandam@rambler.ru
Azerbaijan, pr. Javida 131, Baku, AZ-1143
D. Sh. Abdinov
Abdullaev Institute of Physics
Email: bagieva-gjulandam@rambler.ru
Azerbaijan, pr. Javida 131, Baku, AZ-1143
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