Effect of bismuth on parameters of a GaInSbAsP solid solution grown on GaSb substrates
- Авторы: Alfimova D.L.1, Lunin L.S.1, Lunina M.L.1, Pashchenko A.S.1, Chebotarev S.N.1,2
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Учреждения:
- Southern Scientific Center
- Platov State Polytechnic University
- Выпуск: Том 53, № 1 (2017)
- Страницы: 57-64
- Раздел: Article
- URL: https://journals.rcsi.science/0020-1685/article/view/158152
- DOI: https://doi.org/10.1134/S0020168517010010
- ID: 158152
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Аннотация
Heterophase equilibria in the Ga–In–Sb–As–P–Bi system have been analyzed in terms of a simple solution model. We have calculated the stability limits of GaInAsSbPBi solid solutions in the temperature range ~773–873 K and established thermodynamic limitations on their growth. Based on model analysis results, we have grown a GaInAsSbPBi solid solution on a GaSb substrate via temperature-gradient zone recrystallization. It has been shown that the incorporation of bismuth into a GaInAsSbP solid solution extends its stability region, reduces its band gap, and increases the relative lattice mismatch between the layer and substrate at Bi concentrations above 0.3 at %, but reduces the composition region of lattice-matched GaInAsSbPBi/GaSb heterostructures.
Об авторах
D. Alfimova
Southern Scientific Center
Email: lunin_ls@mail.ru
Россия, ul. Chekhova 41, Rostov-on-Don, 344006
L. Lunin
Southern Scientific Center
Автор, ответственный за переписку.
Email: lunin_ls@mail.ru
Россия, ul. Chekhova 41, Rostov-on-Don, 344006
M. Lunina
Southern Scientific Center
Email: lunin_ls@mail.ru
Россия, ul. Chekhova 41, Rostov-on-Don, 344006
A. Pashchenko
Southern Scientific Center
Email: lunin_ls@mail.ru
Россия, ul. Chekhova 41, Rostov-on-Don, 344006
S. Chebotarev
Southern Scientific Center; Platov State Polytechnic University
Email: lunin_ls@mail.ru
Россия, ul. Chekhova 41, Rostov-on-Don, 344006; ul. Prosveshcheniya 132, Novocherkassk, Rostov oblast, 346400
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