Growth of epitaxial Cd1–xMnxTe films
- Autores: Nuriyev I.R.1, Mehrabova M.A.2, Nazarov A.M.1, Sadigov R.M.1
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Afiliações:
- Academician Abdullaev Institute of Physics
- Institute of Radiation Research
- Edição: Volume 52, Nº 9 (2016)
- Páginas: 886-889
- Seção: Article
- URL: https://journals.rcsi.science/0020-1685/article/view/157881
- DOI: https://doi.org/10.1134/S0020168516090132
- ID: 157881
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Resumo
We have studied the growth and structure of epitaxial films of Cd1–xMnx (x = 0.03) diluted magnetic solid solutions grown on mica substrates by molecular beam epitaxy and identified conditions for producing n- and p-type epitaxial films. Using an additional Te vapor source and optimizing the substrate temperature in the growth process, we were able to obtain structurally perfect p-type Cd1–xMnxTe (x = 0.03) films with clean, smooth surfaces. The growth plane of the films on the mica substrates is (111) of a face-centered cubic lattice and their unit-cell parameter is а = 6.477 Å.
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Sobre autores
I. Nuriyev
Academician Abdullaev Institute of Physics
Email: afinnazarov@yahoo.com
Azerbaijão, pr. Javida 33, Baku, AZ1143
M. Mehrabova
Institute of Radiation Research
Email: afinnazarov@yahoo.com
Azerbaijão, ul. B. Vagabzade 9, Baku, AZ1143
A. Nazarov
Academician Abdullaev Institute of Physics
Autor responsável pela correspondência
Email: afinnazarov@yahoo.com
Azerbaijão, pr. Javida 33, Baku, AZ1143
R. Sadigov
Academician Abdullaev Institute of Physics
Email: afinnazarov@yahoo.com
Azerbaijão, pr. Javida 33, Baku, AZ1143
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