Growth of epitaxial Cd1–xMnxTe films


Citar

Texto integral

Acesso aberto Acesso aberto
Acesso é fechado Acesso está concedido
Acesso é fechado Somente assinantes

Resumo

We have studied the growth and structure of epitaxial films of Cd1–xMnx (x = 0.03) diluted magnetic solid solutions grown on mica substrates by molecular beam epitaxy and identified conditions for producing n- and p-type epitaxial films. Using an additional Te vapor source and optimizing the substrate temperature in the growth process, we were able to obtain structurally perfect p-type Cd1–xMnxTe (x = 0.03) films with clean, smooth surfaces. The growth plane of the films on the mica substrates is (111) of a face-centered cubic lattice and their unit-cell parameter is а = 6.477 Å.

Sobre autores

I. Nuriyev

Academician Abdullaev Institute of Physics

Email: afinnazarov@yahoo.com
Azerbaijão, pr. Javida 33, Baku, AZ1143

M. Mehrabova

Institute of Radiation Research

Email: afinnazarov@yahoo.com
Azerbaijão, ul. B. Vagabzade 9, Baku, AZ1143

A. Nazarov

Academician Abdullaev Institute of Physics

Autor responsável pela correspondência
Email: afinnazarov@yahoo.com
Azerbaijão, pr. Javida 33, Baku, AZ1143

R. Sadigov

Academician Abdullaev Institute of Physics

Email: afinnazarov@yahoo.com
Azerbaijão, pr. Javida 33, Baku, AZ1143

Arquivos suplementares

Arquivos suplementares
Ação
1. JATS XML

Declaração de direitos autorais © Pleiades Publishing, Ltd., 2016