Electrical Resistivity of Silicated Silicon Carbide

Authors: Kostanovskiy A.V.¹, Zeodinov M.G.¹, Kostanovskaya M.E.¹, Pronkin A.A.¹
Affiliations:
1. Joint Institute for High Temperatures, Russian Academy of Sciences
Issue: Vol 56, No 5 (2018)
Pages: 824-826
Section: Short Communications
URL: https://journals.rcsi.science/0018-151X/article/view/157832
DOI: https://doi.org/10.1134/S0018151X18050152
ID: 157832

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We present the results of an experiment on the electrical resistivity of silicated silicon carbide within a temperature range of 1200–2200 K.

Electrical Resistivity, Free Silicon Content, Internal Cylinder Surface, Hollow Cylinder Specimens, Tungsten Wire Loop

Joint Institute for High Temperatures, Russian Academy of Sciences

Author for correspondence.
Email: Kostanovskiy@gmail.com
Russian Federation, Moscow, 125412

Joint Institute for High Temperatures, Russian Academy of Sciences

Email: Kostanovskiy@gmail.com
Russian Federation, Moscow, 125412

Joint Institute for High Temperatures, Russian Academy of Sciences

Email: Kostanovskiy@gmail.com
Russian Federation, Moscow, 125412

Joint Institute for High Temperatures, Russian Academy of Sciences

Email: Kostanovskiy@gmail.com
Russian Federation, Moscow, 125412

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