Electrical Resistivity of Silicated Silicon Carbide


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Abstract

We present the results of an experiment on the electrical resistivity of silicated silicon carbide within a temperature range of 1200–2200 K.

About the authors

A. V. Kostanovskiy

Joint Institute for High Temperatures, Russian Academy of Sciences

Author for correspondence.
Email: Kostanovskiy@gmail.com
Russian Federation, Moscow, 125412

M. G. Zeodinov

Joint Institute for High Temperatures, Russian Academy of Sciences

Email: Kostanovskiy@gmail.com
Russian Federation, Moscow, 125412

M. E. Kostanovskaya

Joint Institute for High Temperatures, Russian Academy of Sciences

Email: Kostanovskiy@gmail.com
Russian Federation, Moscow, 125412

A. A. Pronkin

Joint Institute for High Temperatures, Russian Academy of Sciences

Email: Kostanovskiy@gmail.com
Russian Federation, Moscow, 125412

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