Email this article Contact potential difference in the absence of current through the sample in the quantum hall effect regime in InGaAs/InAlAs heterostructure
- Authors: Gudina S.V.1, Neverov V.N.1, Turutkin K.V.1, Vasil’evskii I.S.2, Vinichenko A.N.2
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Affiliations:
- M.N. Mikheev Institute of Metal Physics of Ural Division of Russian Academy of Sciences
- National Research Nuclear University MEPhI
- Issue: Vol 125, No 2 (2024)
- Pages: 153-157
- Section: ЭЛЕКТРИЧЕСКИЕ И МАГНИТНЫЕ СВОЙСТВА
- URL: https://journals.rcsi.science/0015-3230/article/view/264400
- DOI: https://doi.org/10.31857/S0015323024020059
- EDN: https://elibrary.ru/YPJWRA
- ID: 264400
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Abstract
The paper presents experimental results of the appearance of voltage at potential contacts in the absence of an external current through the sample in the plateau region of the quantum Hall effect in a heterostructure with an InGaAs/InAlAs quantum well. The occurrence of voltage is associated with the non-equivalence of edge current in potential contact areas in a magnetic field in a system with a two-dimensional electron gas.
About the authors
S. V. Gudina
M.N. Mikheev Institute of Metal Physics of Ural Division of Russian Academy of Sciences
Email: neverov@imp.uran.ru
Russian Federation, Ekaterinburg, 620108
V. N. Neverov
M.N. Mikheev Institute of Metal Physics of Ural Division of Russian Academy of Sciences
Author for correspondence.
Email: neverov@imp.uran.ru
Russian Federation, Ekaterinburg, 620108
K. V. Turutkin
M.N. Mikheev Institute of Metal Physics of Ural Division of Russian Academy of Sciences
Email: neverov@imp.uran.ru
Russian Federation, Ekaterinburg, 620108
I. S. Vasil’evskii
National Research Nuclear University MEPhI
Email: neverov@imp.uran.ru
Russian Federation, Moscow, 115409
A. N. Vinichenko
National Research Nuclear University MEPhI
Email: neverov@imp.uran.ru
Russian Federation, Moscow, 115409
References
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