Interaction of indium antimonide with saturated sulfur vapor
- Авторлар: Syrov Y.V.1
-
Мекемелер:
- Moscow Technological University (Institute of Fine Chemical Technology)
- Шығарылым: Том 471, № 2 (2016)
- Беттер: 365-367
- Бөлім: Chemistry
- URL: https://journals.rcsi.science/0012-5008/article/view/153858
- DOI: https://doi.org/10.1134/S0012500816120077
- ID: 153858
Дәйексөз келтіру
Аннотация
The chemical reaction of single-crystal indium antimonide with saturated elemental sulfur vapor is diffusion-limited and leads to the formation of the triple layer In2S3–(xIn2S3 + (1–x)Sb2S3)–Sb on the surface of the samples. A model explaining the experimental facts is proposed.
Авторлар туралы
Yu. Syrov
Moscow Technological University (Institute of Fine Chemical Technology)
Хат алмасуға жауапты Автор.
Email: yvsyrov@yandex.ru
Ресей, pr. Vernadskogo 86, Moscow, 119571
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