Interaction of indium antimonide with saturated sulfur vapor
- Autores: Syrov Y.V.1
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Afiliações:
- Moscow Technological University (Institute of Fine Chemical Technology)
- Edição: Volume 471, Nº 2 (2016)
- Páginas: 365-367
- Seção: Chemistry
- URL: https://journals.rcsi.science/0012-5008/article/view/153858
- DOI: https://doi.org/10.1134/S0012500816120077
- ID: 153858
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Resumo
The chemical reaction of single-crystal indium antimonide with saturated elemental sulfur vapor is diffusion-limited and leads to the formation of the triple layer In2S3–(xIn2S3 + (1–x)Sb2S3)–Sb on the surface of the samples. A model explaining the experimental facts is proposed.
Sobre autores
Yu. Syrov
Moscow Technological University (Institute of Fine Chemical Technology)
Autor responsável pela correspondência
Email: yvsyrov@yandex.ru
Rússia, pr. Vernadskogo 86, Moscow, 119571
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