Interaction of indium antimonide with saturated sulfur vapor
- Authors: Syrov Y.V.1
-
Affiliations:
- Moscow Technological University (Institute of Fine Chemical Technology)
- Issue: Vol 471, No 2 (2016)
- Pages: 365-367
- Section: Chemistry
- URL: https://journals.rcsi.science/0012-5008/article/view/153858
- DOI: https://doi.org/10.1134/S0012500816120077
- ID: 153858
Cite item
Abstract
The chemical reaction of single-crystal indium antimonide with saturated elemental sulfur vapor is diffusion-limited and leads to the formation of the triple layer In2S3–(xIn2S3 + (1–x)Sb2S3)–Sb on the surface of the samples. A model explaining the experimental facts is proposed.
About the authors
Yu. V. Syrov
Moscow Technological University (Institute of Fine Chemical Technology)
Author for correspondence.
Email: yvsyrov@yandex.ru
Russian Federation, pr. Vernadskogo 86, Moscow, 119571
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