Origin of Porous Silicon Photoluminescence Peaks in the Wavelength Range 460–700 nm
- Autores: Abramova E.N.1, Khort A.M.1, Yakovenko A.G.1, Tsygankova M.V.1, Syrov Y.V.1, Sorokin T.A.1, Shvets V.I.1
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Afiliações:
- Moscow Technological University (Institute of Fine Chemical Technologies)
- Edição: Volume 481, Nº 2 (2018)
- Páginas: 166-169
- Seção: Chemistry
- URL: https://journals.rcsi.science/0012-5008/article/view/154265
- DOI: https://doi.org/10.1134/S0012500818080037
- ID: 154265
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Resumo
The change in the photoluminescence peaks of porous silicon at λ = 640–670 and 540–560 nm at 300 and 77 K, as well as their behavior after low-temperature annealing of the samples at 500°С, has been studied. The change in these peaks correlated with that in the IR spectra. The peak at 640–670 nm has been explained by the existence Si–OH groups on the porous silicon layers and the peak at 540–560 nm, by the photoluminescence of the silicon matrix per se.
Sobre autores
E. Abramova
Moscow Technological University (Institute of Fine Chemical Technologies)
Email: anavenko@yandex.ru
Rússia, Moscow
A. Khort
Moscow Technological University (Institute of Fine Chemical Technologies)
Autor responsável pela correspondência
Email: anavenko@yandex.ru
Rússia, Moscow
A. Yakovenko
Moscow Technological University (Institute of Fine Chemical Technologies)
Email: anavenko@yandex.ru
Rússia, Moscow
M. Tsygankova
Moscow Technological University (Institute of Fine Chemical Technologies)
Email: anavenko@yandex.ru
Rússia, Moscow
Yu. Syrov
Moscow Technological University (Institute of Fine Chemical Technologies)
Email: anavenko@yandex.ru
Rússia, Moscow
T. Sorokin
Moscow Technological University (Institute of Fine Chemical Technologies)
Email: anavenko@yandex.ru
Rússia, Moscow
V. Shvets
Moscow Technological University (Institute of Fine Chemical Technologies)
Email: anavenko@yandex.ru
Rússia, Moscow
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