Origin of Porous Silicon Photoluminescence Peaks in the Wavelength Range 460–700 nm

Abstract

The change in the photoluminescence peaks of porous silicon at λ = 640–670 and 540–560 nm at 300 and 77 K, as well as their behavior after low-temperature annealing of the samples at 500°С, has been studied. The change in these peaks correlated with that in the IR spectra. The peak at 640–670 nm has been explained by the existence Si–OH groups on the porous silicon layers and the peak at 540–560 nm, by the photoluminescence of the silicon matrix per se.