The Homogeneity Range of Crystalline Tris(8-hydroxyquinoline)gallium


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Abstract

An experimental procedure has been developed for constructing pi–T diagrams (partial vapor pressure of the ligand-forming component–temperature) for luminescent metal complexes with symmetric organic ligands. The partial 8-hydroxyquinoline vapor pressure–temperature diagram has been constructed for tris(8-hydroxyquinoline)gallium electrophosphor (Gaq3) in the temperature range 300–617 K at 8-hydroxyquinoline vapor pressures 10–3–104 Pa, where the homogeneity ranges of different Gaq3 polymorphs have been determined. Structure-sensitive properties of crystalline materials can be tailored by changing synthesis conditions within the homogeneity range of a phase.

About the authors

A. A. Akkuzina

Mendeleev University of Chemical Technology of Russia

Email: aich@rctu.ru
Russian Federation, Moscow, 125047

N. N. Kozlova

Mendeleev University of Chemical Technology of Russia

Email: aich@rctu.ru
Russian Federation, Moscow, 125047

R. I. Avetisov

Mendeleev University of Chemical Technology of Russia

Email: aich@rctu.ru
Russian Federation, Moscow, 125047

I. Kh. Avetisov

Mendeleev University of Chemical Technology of Russia

Author for correspondence.
Email: aich@rctu.ru
Russian Federation, Moscow, 125047


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