The Homogeneity Range of Crystalline Tris(8-hydroxyquinoline)gallium


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Resumo

An experimental procedure has been developed for constructing pi–T diagrams (partial vapor pressure of the ligand-forming component–temperature) for luminescent metal complexes with symmetric organic ligands. The partial 8-hydroxyquinoline vapor pressure–temperature diagram has been constructed for tris(8-hydroxyquinoline)gallium electrophosphor (Gaq3) in the temperature range 300–617 K at 8-hydroxyquinoline vapor pressures 10–3–104 Pa, where the homogeneity ranges of different Gaq3 polymorphs have been determined. Structure-sensitive properties of crystalline materials can be tailored by changing synthesis conditions within the homogeneity range of a phase.

Sobre autores

A. Akkuzina

Mendeleev University of Chemical Technology of Russia

Email: aich@rctu.ru
Rússia, Moscow, 125047

N. Kozlova

Mendeleev University of Chemical Technology of Russia

Email: aich@rctu.ru
Rússia, Moscow, 125047

R. Avetisov

Mendeleev University of Chemical Technology of Russia

Email: aich@rctu.ru
Rússia, Moscow, 125047

I. Avetisov

Mendeleev University of Chemical Technology of Russia

Autor responsável pela correspondência
Email: aich@rctu.ru
Rússia, Moscow, 125047


Declaração de direitos autorais © Pleiades Publishing, Ltd., 2018

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