The Homogeneity Range of Crystalline Tris(8-hydroxyquinoline)gallium


Дәйексөз келтіру

Толық мәтін

Ашық рұқсат Ашық рұқсат
Рұқсат жабық Рұқсат берілді
Рұқсат жабық Тек жазылушылар үшін

Аннотация

An experimental procedure has been developed for constructing pi–T diagrams (partial vapor pressure of the ligand-forming component–temperature) for luminescent metal complexes with symmetric organic ligands. The partial 8-hydroxyquinoline vapor pressure–temperature diagram has been constructed for tris(8-hydroxyquinoline)gallium electrophosphor (Gaq3) in the temperature range 300–617 K at 8-hydroxyquinoline vapor pressures 10–3–104 Pa, where the homogeneity ranges of different Gaq3 polymorphs have been determined. Structure-sensitive properties of crystalline materials can be tailored by changing synthesis conditions within the homogeneity range of a phase.

Авторлар туралы

A. Akkuzina

Mendeleev University of Chemical Technology of Russia

Email: aich@rctu.ru
Ресей, Moscow, 125047

N. Kozlova

Mendeleev University of Chemical Technology of Russia

Email: aich@rctu.ru
Ресей, Moscow, 125047

R. Avetisov

Mendeleev University of Chemical Technology of Russia

Email: aich@rctu.ru
Ресей, Moscow, 125047

I. Avetisov

Mendeleev University of Chemical Technology of Russia

Хат алмасуға жауапты Автор.
Email: aich@rctu.ru
Ресей, Moscow, 125047

Қосымша файлдар

Қосымша файлдар
Әрекет
1. JATS XML

© Pleiades Publishing, Ltd., 2018