The Homogeneity Range of Crystalline Tris(8-hydroxyquinoline)gallium
- Autores: Akkuzina A.1, Kozlova N.1, Avetisov R.1, Avetisov I.1
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Afiliações:
- Mendeleev University of Chemical Technology of Russia
- Edição: Volume 480, Nº 1 (2018)
- Páginas: 85-88
- Seção: Chemistry
- URL: https://journals.rcsi.science/0012-5008/article/view/154209
- DOI: https://doi.org/10.1134/S0012500818050038
- ID: 154209
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Resumo
An experimental procedure has been developed for constructing pi–T diagrams (partial vapor pressure of the ligand-forming component–temperature) for luminescent metal complexes with symmetric organic ligands. The partial 8-hydroxyquinoline vapor pressure–temperature diagram has been constructed for tris(8-hydroxyquinoline)gallium electrophosphor (Gaq3) in the temperature range 300–617 K at 8-hydroxyquinoline vapor pressures 10–3–104 Pa, where the homogeneity ranges of different Gaq3 polymorphs have been determined. Structure-sensitive properties of crystalline materials can be tailored by changing synthesis conditions within the homogeneity range of a phase.
Sobre autores
A. Akkuzina
Mendeleev University of Chemical Technology of Russia
Email: aich@rctu.ru
Rússia, Moscow, 125047
N. Kozlova
Mendeleev University of Chemical Technology of Russia
Email: aich@rctu.ru
Rússia, Moscow, 125047
R. Avetisov
Mendeleev University of Chemical Technology of Russia
Email: aich@rctu.ru
Rússia, Moscow, 125047
I. Avetisov
Mendeleev University of Chemical Technology of Russia
Autor responsável pela correspondência
Email: aich@rctu.ru
Rússia, Moscow, 125047