Features of Pore Nucleation in p-Si during Its Electrochemical Etching

E. N. Abramova; A. M. Khort; A. G. Yakovenko; Yu. V. Syrov; V. N. Tsygankov; E. A. Slipchenko; V. I. Shvets

doi:10.1134/S0012500819070012

Features of Pore Nucleation in p-Si during Its Electrochemical Etching

Authors: Abramova E.N.¹, Khort A.M.¹, Yakovenko A.G.¹, Syrov Y.V.¹, Tsygankov V.N.¹, Slipchenko E.A.¹, Shvets V.I.¹
Affiliations:
1. MIREA—Russian Technological University
Issue: Vol 487, No 1 (2019)
Pages: 165-167
Section: Chemistry
URL: https://journals.rcsi.science/0012-5008/article/view/154458
DOI: https://doi.org/10.1134/S0012500819070012
ID: 154458

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Abstract

Features of the formation of porous silicon layers during anodic etching of p-Si were considered. A fundamental difference between the mechanisms of the formation of nanostructured layers on p-and n-Si was shown.