Thermodynamic Analysis of the Interaction of Components in the Si–C–O System in the Carbothermic Synthesis of Silicon Carbide

Abstract

Phase equilibria in the Si–C–O system at temperatures of 1400–1700°C were modeled to theoretically determine the optimal conditions for implementing our proposed method of carbothermic synthesis of silicon carbide in reactors with an autonomous protective atmosphere. It was found that, depending on the ratio between the initial components and the synthesis temperature, the equilibrium products of the synthesis can be various combinations of silicon carbide, a gas phase, residual amounts of silicon oxide and carbon, and an oxide melt formed at high temperatures.