The effect of the type of conductivity on the initiation and formation of pores in silicon during electrochemical etching

E. N. Abramova; A. M. Khort; A. G. Yakovenko; V. N. Tsygankov; E. A. Slipchenko; V. I. Shvets

doi:10.1134/S0012500817120011

The effect of the type of conductivity on the initiation and formation of pores in silicon during electrochemical etching

Authors: Abramova E.N.¹, Khort A.M.¹, Yakovenko A.G.¹, Tsygankov V.N.¹, Slipchenko E.A.¹, Shvets V.I.¹
Affiliations:
1. Moscow Technological University (Institute of Fine Chemical Technologies)
Issue: Vol 477, No 2 (2017)
Pages: 271-273
Section: Chemistry
URL: https://journals.rcsi.science/0012-5008/article/view/154110
DOI: https://doi.org/10.1134/S0012500817120011
ID: 154110

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Abstract

The effect of the type of Si conductivity on the initiation and formation of pores in silicon samples during electrochemical etching was studied. The difference between the pore formation processes in n- and p-conducting silicon was attributed to the properties and the nature of layers formed in the initial period of etching on the Si surface. A possible composition of the layers formed on the Si surface was proposed considering the chemistry of Si interaction with the etching agent.