The effect of the type of conductivity on the initiation and formation of pores in silicon during electrochemical etching
- Авторы: Abramova E.1, Khort A.1, Yakovenko A.1, Tsygankov V.1, Slipchenko E.1, Shvets V.1
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Учреждения:
- Moscow Technological University (Institute of Fine Chemical Technologies)
- Выпуск: Том 477, № 2 (2017)
- Страницы: 271-273
- Раздел: Chemistry
- URL: https://journals.rcsi.science/0012-5008/article/view/154110
- DOI: https://doi.org/10.1134/S0012500817120011
- ID: 154110
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Аннотация
The effect of the type of Si conductivity on the initiation and formation of pores in silicon samples during electrochemical etching was studied. The difference between the pore formation processes in n- and p-conducting silicon was attributed to the properties and the nature of layers formed in the initial period of etching on the Si surface. A possible composition of the layers formed on the Si surface was proposed considering the chemistry of Si interaction with the etching agent.
Об авторах
E. Abramova
Moscow Technological University (Institute of Fine Chemical Technologies)
Email: anavenko@yandex.ru
Россия, Moscow
A. Khort
Moscow Technological University (Institute of Fine Chemical Technologies)
Email: anavenko@yandex.ru
Россия, Moscow
A. Yakovenko
Moscow Technological University (Institute of Fine Chemical Technologies)
Автор, ответственный за переписку.
Email: anavenko@yandex.ru
Россия, Moscow
V. Tsygankov
Moscow Technological University (Institute of Fine Chemical Technologies)
Email: anavenko@yandex.ru
Россия, Moscow
E. Slipchenko
Moscow Technological University (Institute of Fine Chemical Technologies)
Email: anavenko@yandex.ru
Россия, Moscow
V. Shvets
Moscow Technological University (Institute of Fine Chemical Technologies)
Email: anavenko@yandex.ru
Россия, Moscow