Fractal Control of the Electron Spectrum of the Interfaces in Solar Elements Based on Covalent Semiconductors


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Based on a combination of the Madelung-Seitz and Phillips-Penn approaches, the effect of fractality of the interface on its electronic structure in a covalent semiconductor solar cell is considered. The possibility of pumping a local level from the region of recombination to the region of attachment and back is found. A number of applications are considered, in particular, a new mechanism of radiative degradation by lowering the fractality of the interface.

作者简介

Kh. Ashurov

Arifov Institute of Ion-Plasma and Laser Technologies

编辑信件的主要联系方式.
Email: bek.fiz.1986@mail.ru
乌兹别克斯坦, Tashkent, 100125

B. Kutlimurotov

Arifov Institute of Ion-Plasma and Laser Technologies

Email: bek.fiz.1986@mail.ru
乌兹别克斯坦, Tashkent, 100125

B. Oksengendler

Arifov Institute of Ion-Plasma and Laser Technologies

Email: bek.fiz.1986@mail.ru
乌兹别克斯坦, Tashkent, 100125

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