Production and Characteristics of (ZnSe)0.1(SnSe)0.9 Films for Use in Thin Film Solar Cells
- Авторы: Razykov T.M.1, Ergashev B.A.1, Yuldoshov R.T.1, Mavlonov A.A.1, Kuchkarov K.M.1
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Учреждения:
- Physical-Technical Institute
- Выпуск: Том 54, № 4 (2018)
- Страницы: 255-260
- Раздел: Solar Engineering Solar Engineering Material Science
- URL: https://journals.rcsi.science/0003-701X/article/view/149464
- DOI: https://doi.org/10.3103/S0003701X18040138
- ID: 149464
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Аннотация
(ZnSe)x(SnSe)1–x films have been produced using chemical molecular beam deposition (CMBD) from an ZnSe and SnSe compound with a stoichiometric composition at a substrate temperature of 500°С. The structural, morphological, and electrophysical properties of (ZnSe)0.1 (SnSe)0.9 films are studied. The size of film grains is 5–6 μm. The results of X-ray diffraction analysis of specimens have revealed that the films have a crystalline (orthorhombic) structure. The structural parameters of the produced films are presented. The electrical conductivity of the films measured using the Van der Pauw method varies within 15–0.6 Ω cm–1.
Об авторах
T. Razykov
Physical-Technical Institute
Email: k.kuchkarov@mail.ru
Узбекистан, Tashkent, 100084
B. Ergashev
Physical-Technical Institute
Email: k.kuchkarov@mail.ru
Узбекистан, Tashkent, 100084
R. Yuldoshov
Physical-Technical Institute
Email: k.kuchkarov@mail.ru
Узбекистан, Tashkent, 100084
A. Mavlonov
Physical-Technical Institute
Email: k.kuchkarov@mail.ru
Узбекистан, Tashkent, 100084
K. Kuchkarov
Physical-Technical Institute
Автор, ответственный за переписку.
Email: k.kuchkarov@mail.ru
Узбекистан, Tashkent, 100084
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