Direct solar conversion to electricity nanoscale effects in pSi–n(Si2)1–x(ZnSe)x (0 ≤ x ≤ 0.01) of solar cells
- 作者: Saidov A.S.1, Amonov K.A.1, Kutlimurotov B.R.2
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隶属关系:
- Physics and Technology Institute
- Ion-Plasma and Laser Technology Institute
- 期: 卷 52, 编号 1 (2016)
- 页面: 1-4
- 栏目: Direct Conversion of Solar Energy to Electric Energy
- URL: https://journals.rcsi.science/0003-701X/article/view/149095
- DOI: https://doi.org/10.3103/S0003701X16010102
- ID: 149095
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详细
Epitaxial layers of the solid solutions (Si2)1–x(ZnSe)x (0 ≤ x ≤ 0.01) of n-type conductivity on pSi base were cultivated by liquid phase epitaxy from a restricted amount of tin solution–melt. The spectral photosensitivity dependence of the pSi–n(Si2)1–x(ZnSe)x structure was studied. A peak was discovered in the response level within the interval of photon energy from 2.67 to 3 eV conditioned by the energy band of ZnSe “quantum dots,” which is located ~1.55 eV lower than the ceiling of the silicon valence band.
作者简介
A. Saidov
Physics and Technology Institute
编辑信件的主要联系方式.
Email: amin@uzsci.net
乌兹别克斯坦, Tashkent
K. Amonov
Physics and Technology Institute
Email: amin@uzsci.net
乌兹别克斯坦, Tashkent
B. Kutlimurotov
Ion-Plasma and Laser Technology Institute
Email: amin@uzsci.net
乌兹别克斯坦, Tashkent
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