Direct solar conversion to electricity nanoscale effects in pSi–n(Si2)1–x(ZnSe)x (0 ≤ x ≤ 0.01) of solar cells


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Epitaxial layers of the solid solutions (Si2)1–x(ZnSe)x (0 ≤ x ≤ 0.01) of n-type conductivity on pSi base were cultivated by liquid phase epitaxy from a restricted amount of tin solution–melt. The spectral photosensitivity dependence of the pSi–n(Si2)1–x(ZnSe)x structure was studied. A peak was discovered in the response level within the interval of photon energy from 2.67 to 3 eV conditioned by the energy band of ZnSe “quantum dots,” which is located ~1.55 eV lower than the ceiling of the silicon valence band.

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A. Saidov

Physics and Technology Institute

编辑信件的主要联系方式.
Email: amin@uzsci.net
乌兹别克斯坦, Tashkent

K. Amonov

Physics and Technology Institute

Email: amin@uzsci.net
乌兹别克斯坦, Tashkent

B. Kutlimurotov

Ion-Plasma and Laser Technology Institute

Email: amin@uzsci.net
乌兹别克斯坦, Tashkent

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