Formation of silicon nanocrystals in Si—SiO2—α-Si—SiO2 heterostructures during high-temperature annealing: Experiment and simulation

Аннотация

Experiments and simulations are performed to study the formation of silicon nanocrystals (Si-NCs) in multilayer structures with alternating ultrathin layers of SiO₂ and amorphous hydrogenized silicon (α-Si:H) during high-temperature annealing. The effect of annealing on the transformation of the structure of the α-Si:H layers is studied by methods of high-resolution transmission electron microscopy, Raman spectroscopy, and photoluminescence spectroscopy. The conditions and kinetics of Si-NC formation are analyzed by the Monte Carlo technique. The type of the resultant crystalline silicon clusters is found to depend on the thickness and porosity of the original amorphous silicon layer located between SiO₂ layers. It is shown that an increase in the thickness of the α-Si layer in the case of low porosity leads to the formation of a percolation silicon cluster instead of individual Si nanocrystals.