Email this article Charge transport in thin hafnium and zirconium oxide films
- Authors: Islamov D.R.1,2, Gritsenko V.A.1,2, Chin A.3
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Affiliations:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- National Chiao Tung University
- Issue: Vol 53, No 2 (2017)
- Pages: 184-189
- Section: Physical and Engineering Fundamentals of Microelectronics and Optoelectronics
- URL: https://journals.rcsi.science/8756-6990/article/view/212109
- DOI: https://doi.org/10.3103/S8756699017020121
- ID: 212109
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Abstract
The mechanism of charge transport in MIS structures on the basis of thin hafnium and zirconium oxide films is studied. It is shown that transport in the studied materials is limited by phonon assisted tunneling between traps. From the comparison of experimental current-voltage characteristics of MIS structures n-Si/HfO2/Ni and n-Si/ZrO2/Ni, the estimated, thermal, and optical energies of traps are determined. It is shown that oxygen vacancies are localization centers (traps) of charge carriers in HfO2 and ZrO2.
About the authors
D. R. Islamov
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Author for correspondence.
Email: damir@isp.nsc.ru
Russian Federation, pr. Academika Lavrent’eva 13, Novosibirsk, 630090; ul. Pirogova 2, Novosibirsk, 630090
V. A. Gritsenko
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: damir@isp.nsc.ru
Russian Federation, pr. Academika Lavrent’eva 13, Novosibirsk, 630090; ul. Pirogova 2, Novosibirsk, 630090
A. Chin
National Chiao Tung University
Email: damir@isp.nsc.ru
Taiwan, Province of China, University Road 1001, Hsinchu, Taiwan, 300
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