Quantum key distribution in single-photon communication system
- Authors: Tretyakov D.B.1,2, Kolyako A.V.1,2,3, Pleshkov A.S.1,2,4, Entin V.M.1,2, Ryabtsev I.I.1,2, Neizvestny I.G.1
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Affiliations:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- Institute of Laser Physics, Siberian Branch
- Institute of Automation and Electrometry, Siberian Branch
- Issue: Vol 52, No 5 (2016)
- Pages: 453-461
- Section: Optical Information Technologies
- URL: https://journals.rcsi.science/8756-6990/article/view/212002
- DOI: https://doi.org/10.3103/S8756699016050071
- ID: 212002
Cite item
Abstract
This paper presents a brief review of experimental studies in quantum cryptography and quantum key distribution by single photons in atmospheric and fiber-optic quantum communication channels. Two experimental setups for quantum key distribution developed at the Rzhanov Institute of Semiconductor Physics SB RAS are described. The dependence of the quantum key distribution rate on the average number of photons μ in the laser pulse was studied. For μ > 0.3, there is a discrepancy between theory and experiment. The reasons for this are, first, the nonzero probability of multiphoton pulses occurring in quantum transmission and counted as single photons by single-photon detectors and, second, the rejection of the cases where several single-photon detectors click simultaneously in quantum key sifting because the measurement result is not determined in these cases.
About the authors
D. B. Tretyakov
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: ryabtsev@isp.nsc.ru
Russian Federation, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090; ul. Pirogova 2, Novosibirsk
A. V. Kolyako
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University; Institute of Laser Physics, Siberian Branch
Email: ryabtsev@isp.nsc.ru
Russian Federation, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090; ul. Pirogova 2, Novosibirsk; pr. Akademika Lavrent’eva 13/3, Novosibirsk, 630090
A. S. Pleshkov
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University; Institute of Automation and Electrometry, Siberian Branch
Email: ryabtsev@isp.nsc.ru
Russian Federation, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090; ul. Pirogova 2, Novosibirsk; pr. Akademika Koptyuga 1, Novosibirsk, 630090
V. M. Entin
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: ryabtsev@isp.nsc.ru
Russian Federation, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090; ul. Pirogova 2, Novosibirsk
I. I. Ryabtsev
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Author for correspondence.
Email: ryabtsev@isp.nsc.ru
Russian Federation, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090; ul. Pirogova 2, Novosibirsk
I. G. Neizvestny
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: ryabtsev@isp.nsc.ru
Russian Federation, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090
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