Email this article Proximity effects in formation of photonic crystals by lithographic methods
- Authors: Rodyakina E.E.1,2, Konfederatova K.A.1,2
-
Affiliations:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- Issue: Vol 52, No 3 (2016)
- Pages: 292-297
- Section: Physical and Engineering Fundamentals of Microelectronics and Optoelectronics
- URL: https://journals.rcsi.science/8756-6990/article/view/211965
- DOI: https://doi.org/10.3103/S8756699016030122
- ID: 211965
Cite item
Open Access
Access granted
Subscription Access
Abstract
Proximity effects in formation of photonic crystals in the form of ordered arrays of holes of similar radii close to 100 nm by methods of electron beam lithography are considered. The coefficients of the proximity function characterizing the contribution of back-scattered and secondary electrons to the exposure dose are experimentally determined. It is demonstrated that the minimum standard deviation from the mean radius of the elements in the array is provided by means of the proximity effect correction with the use of experimentally obtained coefficients and an iterative equation with an increased contribution of back-scattered electrons.
About the authors
E. E. Rodyakina
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Author for correspondence.
Email: rodyakina@isp.nsc.ru
Russian Federation, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090; ul. Pirogova, 2, Novosibirsk, 630090
K. A. Konfederatova
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: rodyakina@isp.nsc.ru
Russian Federation, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090; ul. Pirogova, 2, Novosibirsk, 630090
Supplementary files
