Formation of an Array of Memristor Structures Using a Self-Assembly Matrix of Porous Anodic Aluminum Oxide
- Авторы: Belov A.N.1, Golishnikov A.A.1, Kislitsin M.V.1, Perevalov A.A.1, Solnyshkin A.V.2, Shevyakov V.I.1
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Учреждения:
- National Research University of Electronic Technology
- Tver State University
- Выпуск: Том 13, № 1-2 (2018)
- Страницы: 34-37
- Раздел: Article
- URL: https://journals.rcsi.science/2635-1676/article/view/220349
- DOI: https://doi.org/10.1134/S1995078018010032
- ID: 220349
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Аннотация
In this paper we demonstrate a technological route for the formation of an array of memristor structures using a self-assembly matrix of porous anodic aluminum oxide. We propose using a porous alumina matrix as a solid mask to develop pores in the dense silicon oxide layer below the mask, in which a material characterized by the possibility of resistive switching is formed. The merit of this mask should include reproducibility and the high-precision control of geometric parameters of the pores. The current-voltage characteristics of a memristor structure based on solid electrolyte Cu2S are determined.
Об авторах
A. Belov
National Research University of Electronic Technology
Автор, ответственный за переписку.
Email: nanointech@mail.ru
Россия, Moscow, 124498
A. Golishnikov
National Research University of Electronic Technology
Email: nanointech@mail.ru
Россия, Moscow, 124498
M. Kislitsin
National Research University of Electronic Technology
Email: nanointech@mail.ru
Россия, Moscow, 124498
A. Perevalov
National Research University of Electronic Technology
Email: nanointech@mail.ru
Россия, Moscow, 124498
A. Solnyshkin
Tver State University
Email: nanointech@mail.ru
Россия, Tver, 170100
V. Shevyakov
National Research University of Electronic Technology
Email: nanointech@mail.ru
Россия, Moscow, 124498
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