Simulation of switching maps for thermally assisted MRAM nanodevices

Аннотация

Thermally assisted magnetic random access memory (TAS-MRAM) nanodevices are promising candidates for future memory applications, because they provide non-volatile data storage at fast operation and low energy consumption. In this work, we analyze operating regimes of these devices using macrospin and micromagnetic modeling. It is shown that, for the successful performance of write and read operations in a TAS-MRAM device, the intrinsic magnetic anisotropy of ferromagnetic layers must not exceed some critical value. The relationship between the device parameters and the value of critical magnetic anisotropy is explained using analytical model and proved by the results of numerical simulation. This analysis is important for the future downscaling of TAS-MRAM nanodevices.