STUDY OF THE EFFECT OF THE BUFFER LAYER ON THE SUBSTRATE SURFACE AND THE PROCESS MEDIUM ON NANOCLUSTER FORMATION IN THE Si1 – xGex STRUCTURE

Abstract

In this paper, we report the experimental results of the effect of the initial buffer layer on the substrate surface and the process medium on the possibility and features of the formation of Si_1 – xGe_x nanoclusters (Si, Ge, and SiGe). We proposed a mechanism for the formation of silicon, germanium, and silicon–germanium nanoclusters on buffer layers of amorphous silicon, silicon nitride, and silicon, dysprosium, and yttrium oxides. The effect of the initial buffer layer on the substrate surface under the film deposition conditions of nanostructured silicon doped with germanium (NSS(Ge)) on the configuration, size, and surface concentration of nanocrystals is shown.