Email this article Identification and Extraction of Electrophysical Parameters for Solar Cell Models by Experimental Data
- Authors: Dolgopolov M.V.1,2, Chipura A.S.1,2, Shishkin I.A.2
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Affiliations:
- Samara State Technical University
- Samara National Research University named after Academician S.P. Korolev
- Issue: Vol 10, No 3 (2023)
- Pages: 144-160
- Section: NANOMATERIALS
- URL: https://journals.rcsi.science/2313-223X/article/view/252174
- DOI: https://doi.org/10.33693/2313-223X-2023-10-3-144-160
- EDN: https://elibrary.ru/TAGTVX
- ID: 252174
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Abstract
The article summarizes the methodology of identification and extraction of electrophysical characteristics of solar cells for various models based on experimental data and equivalent one-, two-, three-diode circuits. A technique based on computer modeling in the Wolfram Mathematica analytical system and in the Mathcad computer algebra system is proposed. The technique allows to compare theoretical and experimental data and deal with different models in both directions – from experiment to theory and vice versa. Experimental work was also carried out to create solar cells based on porous silicon with antireflection coatings (ZnS, DyF3, ZnS + DyF3) and with SiC/Si heterojunctions. Measurements of the I-V and P-V of experimental photoconverters, as well as their surface resistances from the sides of phosphorus and boron doping on the formation of the p-n-junction, were carried out. The main purpose of the study is to develop a methodology for optimizing solar cells and to present modeling and analysis methods that can be used in the development of photobetaconverters to ensure maximum power.
Keywords
current-voltage characteristic, parameter extraction, solar cells, silicon carbide, porous silicon, single crystal module, mathematical modeling, monocrystalline module, photovoltaic cell, photovoltaic system, energy efficiency, optimization, adaptive control, maximum power point tracking, GMPPT, partial shading condition, extremum seeking control, equivalent circuit
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##article.viewOnOriginalSite##About the authors
Mikhail V. Dolgopolov
Samara State Technical University; Samara National Research University named after Academician S.P. Korolev
Author for correspondence.
Email: mikhaildolgopolov68@gmail.com
ORCID iD: 0000-0002-8725-7831
SPIN-code: 2104-1911
Candidate of Physics and Mathematics, Associate Professor; associate professor at the Department of Higher Mathematics; Head of the joint Research Laboratory of Mathematical Physics NIL-319
Russian Federation, Samara; SamaraAlexander S. Chipura
Samara State Technical University; Samara National Research University named after Academician S.P. Korolev
Email: al_five@mail.ru
ORCID iD: 0009-0004-0425-0653
SPIN-code: 8992-7768
lecturer; student
Russian Federation, Samara; SamaraIvan A. Shishkin
Samara National Research University named after Academician S.P. Korolev
Email: shishkinivan9@gmail.com
ORCID iD: 0000-0002-8413-9661
SPIN-code: 2233-8550
postgraduate student
Russian Federation, SamaraReferences
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Supplementary files
Supplementary Files
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1.
JATS XML
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Fig. 1. The general equivalent three-diode scheme of a photobetavoltaic cell with effective resistances
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Fig. 2. Construction of Lambert’s W-function
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Fig. 3. Flowchart
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Fig. 4. Experimental solar cells
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Fig. 5. I-V and P-V curves of samples No. 2 (a) and 4 (b)
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Fig. 6. I-V and P-V curves of samples No. 7 (a) and 24 (b)
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Fig. 7. I-V and P-V curves of samples No. 29 (a) and 37 (b)
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Fig. 8. I-V and P-V curves of sample No. 48
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Fig. 9. I-V (a) and P-V (b) curves of sample with heterojunction SiC/Si No. 1
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Fig. 10. I-V (a) and P-V curves of sample with heterojunction SiC/Si No. 8
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Fig. 11. I-V (a) and P-V (b) curves of sample with heterojunction SiC/Si No. 12
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Fig. 12. I-V (a) and P-V (b) curves of sample with heterojunction SiC/Si No. 15
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Fig. 13. Volt-ampere characteristic for a single-diode model SDM
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Fig. 14. Characteristics I-V and P-V curves for a common equivalent single diode model (1) GaAs (a) and SiC (b)
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Fig. 15. Characteristics I-V of the experimental and theoretical curve
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