Electrophysical Properties of a Solar Cell with Non-Traditional Contact Structures

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Abstract

Based on a number of experimental and patented works, the competitive efficiency of a solar cell with non-traditional contact structures is substantiated in detail. It is shown that the efficiency of a solar cell depends on the innovative choice of its contact materials (nano-sized crystalline lead chalcogenide and structureless non-crystalline silicon). The specific electro physical properties of lead chalcogenide and silicon are considered, providing a significant improvement in the converting properties of the solar cell. A specific mechanism for the formation of a contact field due to the participation of current carriers from localized defect energy states of the silicon band gap is presented. By solving the Poisson equation, the parameters of the contact field of the – nano-heterojunction were calculated.

About the authors

Mardon A. Askarov

Karakalpak State University named after Berdakh of the Ministry of Higher and Secondary Specialized Education of the Republic of Uzbekistan

Author for correspondence.
Email: asqarovm@list.ru
ORCID iD: 0000-0003-4627-3170

PhD student at the Department of Semiconductors Physics

Uzbekistan, Nukus, Republic of Karakalpakstan

Erkin Z. Imamov

Tashkent University of Information Technologies named after Muhammad al-Khwarizmi (TUIT) of the Ministry for Development of Information Technologies and Communications of the Republic of Uzbekistan

Email: erkinimamov@mail.ru
ORCID iD: 0009-0007-4952-1842

Doct. Sci. (Phys. and Math.), Professor, Department of Physics

Uzbekistan, Tashkent

Ramizulla A. Muminov

Physical-Technical Institute of the SPA “Physics-Sun” of the Academy of Science of Uzbekistan

Email: detector@uzsci.net
ORCID iD: 0000-0001-7243-595X

Academician, Doct. Sci. (Phys. and Math.), Professor

Uzbekistan, Tashkent

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Supplementary files

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2. Fig-1

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3. Fig. 2. For a localized defective energy state an + p the arrow shows the value of E(r) - its binding energy

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4. Fig. 3

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5. Fig. 4. State before contact formation (a). The has been formed (b).For simplicity, from Fig. 2 only the upper part (above FS1) of the g(E) curve is considered

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6. Fig. 5.

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7. Fig. 6

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