Efficiency of Activated Nano-Heterojunctions on Silicon and Silicon Carbide Substrates

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Abstract

The concept, model, and examples of activated nanoscale heterojunctions on special silicon carbide and silicon substrates to ensure maximum power with combined geometric and quantitative scaling of semiconductor energy converter chips are considered. The issue of maximum efficiency of energy conversion and efficiency of separation of electron-hole pairs is investigated. A variant of optimizing the scaling solution is implemented by heterojunctions with variations in the sequences of layers with an increase in the concentration and direction of movement of nonequilibrium carriers for further increasing voltage conversion with charge pumping. Numerical simulation was performed to test the model with thin layers of GaN, GaP on SiC, SiC/Si. For the first time, definitions of activation of the heterojunction and activated nanoheterojunction as a fundamental structure are proposed. The accuracy of the proposed models is compared with the accuracy of known models, and it is shown that the results obtained are better than some solutions of these models known in the literature.

About the authors

Mikhail V. Dolgopolov

Samara State Technical University; Samara National Research University named after Academician S.P. Korolev

Author for correspondence.
Email: mikhaildolgopolov68@gmail.com
ORCID iD: 0000-0002-8725-7831

Cand. Sci. (Phys. and Math.), Associate Professor, Associate Professor at the Department of Higher Mathematics, Head of the joint Research Laboratory of Mathematical Physics NIL-319

Russian Federation, Samara; Samara

Maksim V. Elisov

Samara National Research University named after Academician S.P. Korolev

Email: maksimelisov2003@gmail.com
ORCID iD: 0009-0001-3097-2703

student

Russian Federation, Samara

Sali A. Radzhapov

Institute of Physics and Technology of the Scientific and Production Association “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan

Email: rsafti@mail.ru
ORCID iD: 0000-0002-4615-027X

Doct. Sci. (Phys. and Math.), chief researcher

Uzbekistan, Tashkent

Viktor I. Chepurnov

Samara National Research University named after Academician S.P. Korolev

Email: chvi44@yandex.ru
ORCID iD: 0000-0003-0461-1880

Cand. Sci. (Eng.), associate professor at the Department of Solid-State Physics and Nonequilibrium Systems

Russian Federation, Samara

Alexander S. Chipura

Samara State Technical University

Email: al_five@mail.ru
ORCID iD: 0009-0004-0425-0653

lecturer

Russian Federation, Samara

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Supplementary files

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1. JATS XML
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2. Fig. 1. An example of the simplest ANHJ band energy diagram (a) and an illustration to scaling (b)

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3. Fig. 2. Dependence of concentration (a) and quasi-Fermi (b) levels on various parameters

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4. Fig- 3. ANHJ design options

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5. Fig 4. Efficiency in semiconductor materials based with 63Ni and 14C

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