Surface structuring of silicon wafers with low-frequency giant pulses YAG:ND laser

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Abstract

Experimental results on the silicon wafers irradiation by a low-frequency giant nanosecond pulses neodymium-doped yttrium-aluminum garnet laser with a wavelength of 1,064 μm are presented. The pulse duration at the half-height was 170 ns, and the pulse repetition frequency was 2 Hz. The experiments were carried out for the cases of silicon wafers placements in air and in bidistilled water. For the case of irradiation in air, a nanostructured region with a uniform distribution of particles was succeeded to form on the surface of the silicon wafer. The exposure time was 2 minutes, which corresponded to 240 laser pulses. In this case, the particles were formed mainly from silicon dioxide as a result of the thermal oxidation during ablation in air. When the exposure time was doubled, this effect was not achieved, and destruction areas of wafer were formed. For the case of irradiation in bidistilled water within two and four minutes, the mechanical and thermal destructions prevail on the surface of the silicon wafer, which manifest themselves in cracking along the edges of the crystal structure and in the form of the surface solidified melted regions.

About the authors

Anastasiya A. Fronya

P.N. Lebedev Physical Institute of the Russian Academy of Sciences; National Research Nuclear University MEPhI

Email: fronyaaa@lebedev.ru
Senior Researcher, P.N. Lebedev Physical Institute of the Russian Academy of Sciences; Associate Professor, National Research Nuclear University MEPhI

Artyom T. Sahakyan

P.N. Lebedev Physical Institute of the Russian Academy of Sciences

Acting Head of Laboratory, (Laboratory of the Laser Radiation Effect)

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