Synthesis of phase-change material Ge2Sb2Te5 nanoparticles by laser-induced forward transfer techniques

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Experimental results on the synthesis of nanoparticles of Ge2Sb2Te5 phase-change material by the direct laser-induced transfer method are presented. Thin films obtained by the thermal vacuum deposition were used as a donor material and silicon wafers as an acceptor. The laser-induced forward transfer was carried out using the sub-nanosecond pulsed laser irradiation. The morphology, topology, and size of the obtained nanoparticles were analyzed by scanning electron microscopy. Structural studies were performed by Raman scattering. A quasi-uniform distribution of nanoparticles on the substrate and a quasi-uniform size distribution were achieved. It was shown that it is possible to achieve a nanoparticle diameter of less than 100 nm. Raman spectra show that the nanoparticles obtained are in the crystalline state. The results show the possibility of creating an element based on nanoparticles with a specific distribution in size as a technological alternative to devices based on thin films. The use of nanoparticles will make it possible to achieve the energy efficiency, greater flexibility, and smoothness of switching as well as to realize neuromorphic and stochastic computation.

Sobre autores

Anton Burtsev

National Research Centre «Kurchatov Institute»

Email: murrkiss2009@yandex.ru
Researcher

Vladimir Mikhalevsky

National Research Centre «Kurchatov Institute»

Researcher

Alexey Nevzorov

National Research Centre «Kurchatov Institute»

Ph. D., Researcher

Alexey Kiselev

National Research Centre «Kurchatov Institute»

Ph. D., Researcher

Maria Konnikova

National Research Centre «Kurchatov Institute»

Junior Researcher

Vitaly Ionin

National Research Centre «Kurchatov Institute»

Researcher

Nikolay Eliseev

National Research Centre «Kurchatov Institute»

Junior Researcher

Andrey Lotin

National Research Centre «Kurchatov Institute»

Ph. D., Deputy Head of the branch

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