X-ray diffraction studies of the growth process of thin films of high-entropy TiNbZrTaHfCu alloy in situ using synchrotron radiation

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Abstract

High-entropy alloys based on refractory metals, possessing an unusual combination of physical, mechanical, tribological, electrophysical, etc. properties, can be recommended for use in various fields of industry and medicine. The aim of the work is to study the growth process of high-entropy alloys films of the Ti-Nb-Zr-Ta-Hf-Cu system in real time by X-ray phase analysis using synchrotron radiation. Experiments on the deposition of multielement metal films were carried out on the VEIPS-1 setup developed at the Institute of high current electronics Siberian branch of the Russian academy of sciences for studying the processes of the film and coating formation on a synchrotron radiation source. The process of in situ thin film structure formation with high time resolution was studied using a synchrotron radiation source - the VEPP-3 electron storage ring, The Institute of nuclear physics, Siberian branch of the Russian academy of sciences. It is shown that the deposition of Ti-Nb-Zr-Ta-Hf-Cu plasma on a HG40 substrate is accompanied by the formation of an amorphous-crystalline state represented by phases of the composition (presumably) Ti-Nb-Zr-Ta-Hf-Cu , TiZr, NbZr , and CuTiZr , formed at different stages of film deposition. The main phase is the Ti-Nb-Zr-Ta-Hf-Cu composition.

About the authors

Yuri F. Ivanov

Institute of High Current Electronics SB RAS

Email: yufi55@mail.ru
Dr. Sc., Chief Researcher, Laboratory of Plasma Emission Electronics

Yuri Kh. Akhmadeev

Institute of High Current Electronics SB RAS

Ph. D., Head of the Laboratory of Plasma Emission Electronics

Anatoly A. Klopotov

Tomsk State University of Architecture and Building

Dr. Sc., Professor, Department of Applied Mechanics and Materials Science

Nikita A. Prokopenko

Institute of High Current Electronics SB RAS

Junior Researcher, Laboratory of Plasma Emission Electronics

Elizaveta A. Petrikova

Institute of High Current Electronics SB RAS

Junior Researcher, Laboratory of Plasma Emission Electronics

Olga V. Krysina

Institute of High Current Electronics SB RAS

Ph. D., Researcher, Laboratory of Plasma Emission Electronics

Vladimir V. Shugurov

Institute of High Current Electronics SB RAS

Researcher, Laboratory of Plasma Emission Electronics

Alexander N. Shmakov

Institute of High Current Electronics SB RAS; Boreskov Institute of Catalysis SB RAS

Dr. Sc., Chief Researcher, Boreskov Institute of Catalysis of the Siberian Branch of the RAS

V. Yu Lavrov

Tomsk State University of Architecture and Building

2nd year graduate student, Department of Applied Mechanics and Materials Science

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