Experimental Study of the Insulator-to-Metal Phase Transition in VO2 Thin Films in the Microwave Range

Abstract

Temperature dependence of insulator-to-metal phase transition in VO₂ epitaxial thin films was studied in the microwave range. Biaxially textured VO₂ thin films were obtained on 3-inch sapphire substrates by the method of chemical vapour deposition (MCVD). The change in the electrical resistance with temperature reached approximately 3 orders of magnitude for the obtained films, measured in the metal-insulator phase transition region. Using a high-temperature quasi-optical setup, the microwave features of the phase transition in VO₂ thin films were studied at temperature. The hysteresis of microwave properties of the studied samples was observed in the temperature range of VO₂ phase transition.