Structure and Properties of the Surface Layer of B4C Ceramic Treated with an Intense Electron Beam
- Authors: Ivanov Y.F.1,2, Khasanov O.L.1, Petyukevich M.S.1, Smirnov G.V.3, Polisadova V.V.1, Bikbaeva Z.G.1, Teresov A.D.2, Kalashnikov M.P.1, Tolkachov O.S.1
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Affiliations:
- National Research Tomsk Polytechnic University
- Institute of High-Current Electronics, Siberian Branch
- Tomsk State University of Control Systems and Radioelectronics
- Issue: Vol 9, No 3 (2018)
- Pages: 437-441
- Section: Functional Coatings and Surface Treatment
- URL: https://journals.rcsi.science/2075-1133/article/view/207426
- DOI: https://doi.org/10.1134/S2075113318030152
- ID: 207426
Cite item
Abstract
Using transmission and scanning electron microscopy, a pulsed intense electron beam irradiation of a sintered boron carbide ceramic is shown to lead to the formation of a modified surface layer with a nonporous polycrystalline structure and initiate microtwinning and the formation of extended submicron- and nanocrystalline interlayers along the boundaries of boron carbide crystallites. The observed structural changes lead to an increase in the fatigue life of the modified layer.
Keywords
About the authors
Yu. F. Ivanov
National Research Tomsk Polytechnic University; Institute of High-Current Electronics, Siberian Branch
Author for correspondence.
Email: yufi55@mail.ru
Russian Federation, Tomsk, 634050; Tomsk, 634055
O. L. Khasanov
National Research Tomsk Polytechnic University
Email: yufi55@mail.ru
Russian Federation, Tomsk, 634050
M. S. Petyukevich
National Research Tomsk Polytechnic University
Email: yufi55@mail.ru
Russian Federation, Tomsk, 634050
G. V. Smirnov
Tomsk State University of Control Systems and Radioelectronics
Email: yufi55@mail.ru
Russian Federation, Tomsk, 634050
V. V. Polisadova
National Research Tomsk Polytechnic University
Email: yufi55@mail.ru
Russian Federation, Tomsk, 634050
Z. G. Bikbaeva
National Research Tomsk Polytechnic University
Email: yufi55@mail.ru
Russian Federation, Tomsk, 634050
A. D. Teresov
Institute of High-Current Electronics, Siberian Branch
Email: yufi55@mail.ru
Russian Federation, Tomsk, 634055
M. P. Kalashnikov
National Research Tomsk Polytechnic University
Email: yufi55@mail.ru
Russian Federation, Tomsk, 634050
O. S. Tolkachov
National Research Tomsk Polytechnic University
Email: yufi55@mail.ru
Russian Federation, Tomsk, 634050