Positron Nondestructive Testing of Gamma-Neutron Irradiated Boron Nitride Ceramics
- Authors: Bardyshev I.I.1, Buravov A.D.2, Gol’danskii A.V.1, Vysotskii V.V.1, Kotenev V.A.1, Tsivadze A.Y.1
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Affiliations:
- Frumkin Institute of Physical Chemistry and Electrochemistry
- Academy of Engineering Sciences of Russia, Innovation and Research Company Kerambet-Ogneupor
- Issue: Vol 55, No 5 (2019)
- Pages: 1015-1018
- Section: Investigation Methods for Physicochemical Systems
- URL: https://journals.rcsi.science/2070-2051/article/view/205524
- DOI: https://doi.org/10.1134/S2070205119050034
- ID: 205524
Cite item
Abstract
The effect of pulse neutron gamma-radiation on material made from sintered ceramics of hexagonal boron nitride α-BN is studied using positron annihilation spectroscopy (PAS). The radiation vacancy defects of the α-BN crystal lattice are effective traps of the positrons diffusing into the bulk particles of the material. The positrons’ lifetime (LT) spectra and angular correlation curves of annihilation gamma-ray quanta (ACAR) in ceramic specimens irradiated by neutrons with a cumulative dose of the neutron flow of 1013 to 1014 neutron/cm2 (the average energy of the neutrons is 1.7 MeV) and gamma radiation of 103 to 105 Р (Eγ = 1 MeV) with the subsequent annealing of the irradiated specimens at 600°C are measured. The observed changes of the annihilation characteristics of the LT and ACAR in the irradiated and sintered specimens allow us to conclude that there is an effective capture of the alpha particles formed upon neutron irradiation via the nuclear reaction B10(n, α)Li7 with vacancy defects. Helium atoms are released from vacancies to the surface of the α-BN plates upon annealing of the irradiated specimens at 600°C. This mechanism explains the high level of radiation stability of α-BN ceramic dielectrics in ionizing radiation fields.
About the authors
I. I. Bardyshev
Frumkin Institute of Physical Chemistry and Electrochemistry
Author for correspondence.
Email: bardyshev@phyche.ac.ru
Russian Federation, Moscow, 119071
A. D. Buravov
Academy of Engineering Sciences of Russia, Innovation and Research Company Kerambet-Ogneupor
Email: bardyshev@phyche.ac.ru
Russian Federation, St. Petersburg, 191002
A. V. Gol’danskii
Frumkin Institute of Physical Chemistry and Electrochemistry
Email: bardyshev@phyche.ac.ru
Russian Federation, Moscow, 119071
V. V. Vysotskii
Frumkin Institute of Physical Chemistry and Electrochemistry
Email: bardyshev@phyche.ac.ru
Russian Federation, Moscow, 119071
V. A. Kotenev
Frumkin Institute of Physical Chemistry and Electrochemistry
Email: bardyshev@phyche.ac.ru
Russian Federation, Moscow, 119071
A. Yu. Tsivadze
Frumkin Institute of Physical Chemistry and Electrochemistry
Email: bardyshev@phyche.ac.ru
Russian Federation, Moscow, 119071
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