The model of radiation-induced conductivity in silicon

Аннотация

In this paper, we consider the conduction current excited in a silicon obstacle by the action of an external flux of penetrating radiation. We use quantum kinetic equations for distribution functions of conduction band electrons and holes of the valence band in the phase space of coordinates and quasi-momentums. Effective masses, densities of states, and group velocities of particles are determined on the base of band theory of a crystal. The approximation of the continuous momentum losses due to scattering on lattice defects is performed. The applicability of the model is validated by the comparison with the experimental data for the electron average-velocity dependence on the electric-field strength and on the velocity of the electron-energy transmission to the lattice. The silicon radiation conductivity excited by a free-electron current is calculated and the compliance of the results with the theoretical estimates is demonstrated.