Quantum simulation of structure switching in a molecular system
- Authors: Popov A.M.1, Nikishin N.G.1, Shumkin G.N.2
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Affiliations:
- Department of Computational Mathematics and Cybernetics
- IBM Systems and Technology Group
- Issue: Vol 8, No 1 (2016)
- Pages: 19-26
- Section: Article
- URL: https://journals.rcsi.science/2070-0482/article/view/200649
- DOI: https://doi.org/10.1134/S2070048216010099
- ID: 200649
Cite item
Abstract
This article presents the results of ab initio quantum simulation of graphite-like structure formation from amorphous carbon. It is devoted to explaining a resistivity switching mechanism in experiments on phase-change memory. In this work, a two-scale molecular dynamics model is used, which consists of Car-Parrinello quantum molecular dynamics (CPMD) and modified Ehrenfest molecular dynamics. The results of simulation point out to the appearance of a layered graphite-like molecular structure at an increase in temperature. These changes in the atomic configuration can be considered as a second-order phase transition in nanostructured material, which leads to threshold resistivity switching. For calculations, the IBM BlueGene/P supercomputer installed at the Faculty of Computational Mathematics and Cybernetics of Moscow State University was used.
About the authors
A. M. Popov
Department of Computational Mathematics and Cybernetics
Author for correspondence.
Email: popov@cs.msu.su
Russian Federation, Moscow
N. G. Nikishin
Department of Computational Mathematics and Cybernetics
Email: popov@cs.msu.su
Russian Federation, Moscow
G. N. Shumkin
IBM Systems and Technology Group
Email: popov@cs.msu.su
Russian Federation, Moscow